Active and preferred
RoHS Compliant
Lead-free

BFP760

Data Sheet
package

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BFP760
BFP760
Data Sheet

Product details

  • Gmax
    28 dB @900 MHz
  • IC max
    70 mA
  • NFmin
    0.50 dB @900 MHz
  • OIP3
    27 dBm @900 MHz
  • OP1dB
    14 dBm @900 MHz
  • Package
    SOT343
  • VCEO max
    4 V
Recommended
OPN
BFP760H6327XTSA1
Product Status active and preferred
Infineon Package
SOT343-4-2
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
SOT343-4-2
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Features

  • Low noise figure NFmin =  0.95 dB @ 5.5 GHz, 3 V, 10 mA
  • High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
  • OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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